Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 58nC @ 10V
- Input Capacitance Ciss Max Vds
- 2730pF @ 25V
- Power Dissipation Max
- 205W Tc
- Voltage Rated Dc
- 900V
- Rds On Max Id Vgs
- 1.4 Ω @ 4A, 10V
- Avalanche Energy Rating Eas
- 900 mJ
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Continuous Drain Current Id
- 8A
- Terminal
- Through Hole
- Drain Currentmax Abs Id
- 8A
- Threshold Voltage
- 5V
- Vgs Max
- ±30V
- Lifecycle Status
- ACTIVE (Last Updated: 5 days ago)
- JESD-609 Kodu
- e3
- Ambalaj
- Tube
- Current Continuous Drain Id25
- 8A Tc
- Number Of Elements
- 1
- Turn Off Delay Time
- 100 ns
- ECCN Kodu
- EAR99
- Vgsth Max Id
- 5V @ 250μA
- Terminal Sayısı
- 3
- Direnç
- 1.4Ohm
- Pin Sayısı
- 3
- Rise Time
- 120ns
- Power Dissipation
- 205W
- Transistor Application
- SWITCHING
- Weight
- 1.8g
- Fet Type
- N-Channel
- Nominal Vgs
- 5 V
- Gate To Source Voltage Vgs
- 30V
- Reach Svhc
- No SVHC
- Kılıf / Paket
- TO-220-3
- Transistor Element Material
- SILICON
- Kurşunsuz
- Lead Free
- Yükseklik
- 9.4mm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Through Hole
- Kurşunsuz Kodu
- yes
- Radyasyon Dayanımı
- No
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