Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fabrika Tedarik Süresi
- 5 Weeks
- Drive Voltage Max Rds On Min Rds On
- 10V
- Turn On Delay Time
- 40 ns
- Montaj
- Through Hole
- Drain To Source Breakdown Voltage
- 900V
- Terminal Kaplaması
- Tin (Sn)
- Seri
- QFET®
- Fall Time Typ
- 70 ns
- Parça Durumu
- Active
- Element Configuration
- Single
- Radyasyon Dayanımı
- No
- Yayın Yılı
- 2013
- RoHS Durumu
- ROHS3 Compliant
- Jedec95 Code
- TO-220AB
- Akım Değeri
- 6.3A
- Montaj Tipi
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kurşunsuz Kodu
- yes
- Kurşunsuz
- Lead Free
- Transistor Element Material
- SILICON
- Kılıf / Paket
- TO-220-3
- Gate To Source Voltage Vgs
- 30V
- Fet Type
- N-Channel
- Weight
- 1.8g
- Transistor Application
- SWITCHING
- Power Dissipation
- 171W
- Rise Time
- 110ns
- Pin Sayısı
- 3
- ECCN Kodu
- EAR99
- Terminal Sayısı
- 3
- Vgsth Max Id
- 5V @ 250μA
- Turn Off Delay Time
- 70 ns
- Number Of Elements
- 1
- Tepe Reflow Sıcaklığı (°C)
- 260
- Current Continuous Drain Id25
- 6.3A Tc
- Ambalaj
- Tube
- Vgs Max
- ±30V
- Lifecycle Status
- ACTIVE (Last Updated: 1 week ago)
- JESD-609 Kodu
- e3
- Continuous Drain Current Id
- 6.3A
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