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Support
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Specifications
- Gate Charge Qg Max Vgs
- 112nC @ 10V
- Input Capacitance Ciss Max Vds
- 4120pF @ 25V
- Voltage Rated Dc
- 60V
- Power Dissipation Max
- 160W Tc
- Rds On Max Id Vgs
- 10m Ω @ 42.5A, 10V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Continuous Drain Current Id
- 85A
- Threshold Voltage
- 4V
- JESD-609 Kodu
- e3
- Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- Vgs Max
- ±25V
- Current Continuous Drain Id25
- 85A Tc
- Ambalaj
- Tube
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Number Of Elements
- 1
- Turn Off Delay Time
- 175 ns
- Terminal Sayısı
- 3
- Direnç
- 10MOhm
- Vgsth Max Id
- 4V @ 250μA
- ECCN Kodu
- EAR99
- Pin Sayısı
- 3
- Rise Time
- 230ns
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Weight
- 4.535924g
- Power Dissipation
- 160W
- Transistor Application
- SWITCHING
- Fet Type
- N-Channel
- Nominal Vgs
- 4 V
- Reach Svhc
- No SVHC
- Gate To Source Voltage Vgs
- 25V
- Kılıf / Paket
- TO-220-3
- Transistor Element Material
- SILICON
- Kurşunsuz
- Lead Free
- Kurşunsuz Kodu
- yes
- Yükseklik
- 9.4mm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Through Hole
- Akım
- 85A
- Akım Değeri
- 85A
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