Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Kurşunsuz
- Lead Free
- Yükseklik
- 9.4mm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Through Hole
- Kurşunsuz Kodu
- yes
- Fet Type
- P-Channel
- Nominal Vgs
- -4 V
- Gate To Source Voltage Vgs
- 25V
- Reach Svhc
- No SVHC
- Kılıf / Paket
- TO-220-3
- Drain To Source Breakdown Voltage
- -60V
- Dual Supply Voltage
- -60V
- Terminal Kaplaması
- Tin (Sn)
- Montaj
- Through Hole
- Drive Voltage Max Rds On Min Rds On
- 10V
- Turn On Delay Time
- 7 ns
- Uzunluk
- 10.1mm
- Fabrika Tedarik Süresi
- 5 Weeks
- Qualification Status
- Not Qualified
- Yayın Yılı
- 2001
- Element Configuration
- Single
- Akım Değeri
- -7A
- Jedec95 Code
- TO-220AB
- RoHS Durumu
- ROHS3 Compliant
- Parça Durumu
- Active
- Fall Time Typ
- 25 ns
- Genişlik
- 4.7mm
- Seri
- QFET®
- Pulsed Drain Currentmax Idm
- 28A
- Drain To Source Voltage Vdss
- 60V
- Rds On Max Id Vgs
- 410m Ω @ 3.5A, 10V
- Avalanche Energy Rating Eas
- 90 mJ
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Continuous Drain Current Id
- 7A
- Drain Currentmax Abs Id
- 7A
- Gate Charge Qg Max Vgs
- 8.2nC @ 10V
- Input Capacitance Ciss Max Vds
- 295pF @ 25V
- Power Dissipation Max
- 45W Tc
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