Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 110nC @ 10V
- Power Dissipation Max
- 160W Tc
- Voltage Rated Dc
- 100V
- Input Capacitance Ciss Max Vds
- 3300pF @ 25V
- Rds On Max Id Vgs
- 23m Ω @ 28.5A, 10V
- Pulsed Drain Currentmax Idm
- 228A
- Continuous Drain Current Id
- 57A
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Vgs Max
- ±25V
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- JESD-609 Kodu
- e3
- Threshold Voltage
- 4V
- Number Of Elements
- 1
- Turn Off Delay Time
- 130 ns
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Current Continuous Drain Id25
- 57A Tc
- Ambalaj
- Tube
- Pin Sayısı
- 3
- ECCN Kodu
- EAR99
- Terminal Sayısı
- 3
- Direnç
- 23MOhm
- Vgsth Max Id
- 4V @ 250μA
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Weight
- 1.8g
- Power Dissipation
- 160W
- Transistor Application
- SWITCHING
- Rise Time
- 470ns
- Gate To Source Voltage Vgs
- 25V
- Reach Svhc
- No SVHC
- Fet Type
- N-Channel
- Kılıf / Paket
- TO-220-3
- Kurşunsuz
- Lead Free
- Transistor Element Material
- SILICON
- Montaj Tipi
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yükseklik
- 9.4mm
- Kurşunsuz Kodu
- yes
- Parça Durumu
- Active
- Fall Time Typ
- 160 ns
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