FQP6N80C

Specifications

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Qualification Status

Not Qualified

Fabrika Tedarik Süresi

7 Weeks

Transistor Application

SWITCHING

HTS Kodu

8541.29.00.95

Terminal Sayısı

3

Terminal Kaplaması

Tin (Sn)

Vgsth Max Id

5V @ 250μA

ECCN Kodu

EAR99

Drive Voltage Max Rds On Min Rds On

10V

Configuration

SINGLE WITH BUILT-IN DIODE

Current Continuous Drain Id25

5.5A Tc

Seri

QFET®

Ambalaj

Tube

Jesd30 Code

R-PSFM-T3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Jedec95 Code

TO-220AB

Yayın Yılı

2003

Parça Durumu

Active

JESD-609 Kodu

e3

Yüzey Montaj

NO

Vgs Max

±30V

Ds Breakdown Voltagemin

800V

Kurşunsuz Kodu

yes

Montaj Tipi

Through Hole

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Avalanche Energy Rating Eas

680 mJ

Drain Currentmax Abs Id

5.5A

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

22A

Rds On Max Id Vgs

2.5 Ω @ 2.75A, 10V

Drain To Source Voltage Vdss

800V

Terminal Pozisyonu

SINGLE

Kılıf / Paket

TO-220-3

Input Capacitance Ciss Max Vds

1310pF @ 25V

Power Dissipation Max

158W Tc