FQP6N40CF

Specifications

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

24A

Rds On Max Id Vgs

1.1 Ω @ 3A, 10V

Avalanche Energy Rating Eas

270 mJ

Montaj Tipi

Through Hole

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz Kodu

yes

Continuous Drain Current Id

6A

Drain Currentmax Abs Id

6A

Gate Charge Qg Max Vgs

20nC @ 10V

Fet Type

N-Channel

Gate To Source Voltage Vgs

30V

Input Capacitance Ciss Max Vds

625pF @ 25V

Kılıf / Paket

TO-220-3

Power Dissipation Max

73W Tc

Drain To Source Breakdown Voltage

400V

ECCN Kodu

EAR99

Vgsth Max Id

4V @ 250μA

Terminal Sayısı

3

Terminal Kaplaması

Tin (Sn)

Montaj

Through Hole

Drive Voltage Max Rds On Min Rds On

10V

Turn On Delay Time

13 ns

Rise Time

65ns

Fabrika Tedarik Süresi

11 Weeks

Power Dissipation

73W

Transistor Application

SWITCHING

Weight

1.8g

Yayın Yılı

2013

Radyasyon Dayanımı

No

Element Configuration

Single

RoHS Durumu

ROHS3 Compliant

Jedec95 Code

TO-220AB

Vgs Max

±30V

JESD-609 Kodu

e3

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

Fall Time Typ

38 ns

Parça Durumu

Active