Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 20nC @ 10V
- Voltage Rated Dc
- 400V
- Power Dissipation Max
- 73W Tc
- Input Capacitance Ciss Max Vds
- 625pF @ 25V
- Rds On Max Id Vgs
- 1 Ω @ 3A, 10V
- Pulsed Drain Currentmax Idm
- 24A
- Drain Currentmax Abs Id
- 6A
- Continuous Drain Current Id
- 6A
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Avalanche Energy Rating Eas
- 270 mJ
- JESD-609 Kodu
- e3
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Vgs Max
- ±30V
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Turn Off Delay Time
- 21 ns
- Number Of Elements
- 1
- Current Continuous Drain Id25
- 6A Tc
- Ambalaj
- Tube
- Pin Sayısı
- 3
- Terminal Sayısı
- 3
- Vgsth Max Id
- 4V @ 250μA
- ECCN Kodu
- EAR99
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Weight
- 1.8g
- Power Dissipation
- 73W
- Transistor Application
- SWITCHING
- Rise Time
- 65ns
- Gate To Source Voltage Vgs
- 30V
- Fet Type
- N-Channel
- Kılıf / Paket
- TO-220-3
- Drainsource On Resistancemax
- 1Ohm
- Kurşunsuz
- Lead Free
- Transistor Element Material
- SILICON
- Kurşunsuz Kodu
- yes
- Yükseklik
- 9.4mm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Through Hole
- Fall Time Typ
- 38 ns
- Contact Plating
- Tin
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