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Specifications
- Pulsed Drain Currentmax Idm
- 260A
- Rds On Max Id Vgs
- 16m Ω @ 32.5A, 10V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Avalanche Energy Rating Eas
- 650 mJ
- Continuous Drain Current Id
- 65A
- Gate Charge Qg Max Vgs
- 65nC @ 10V
- Input Capacitance Ciss Max Vds
- 2410pF @ 25V
- Power Dissipation Max
- 150W Tc
- Voltage Rated Dc
- 60V
- ECCN Kodu
- EAR99
- Direnç
- 16mOhm
- Terminal Sayısı
- 3
- Vgsth Max Id
- 4V @ 250μA
- Pin Sayısı
- 3
- Rise Time
- 160ns
- Weight
- 1.8g
- Power Dissipation
- 150W
- Transistor Application
- SWITCHING
- Vgs Max
- ±25V
- JESD-609 Kodu
- e3
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Current Continuous Drain Id25
- 65A Tc
- Ambalaj
- Tube
- Number Of Elements
- 1
- Turn Off Delay Time
- 90 ns
- Transistor Element Material
- SILICON
- Kurşunsuz
- Lead Free
- Yükseklik
- 9.4mm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Through Hole
- Kurşunsuz Kodu
- yes
- Nominal Vgs
- 4 V
- Fet Type
- N-Channel
- Gate To Source Voltage Vgs
- 25V
- Reach Svhc
- No SVHC
- Kılıf / Paket
- TO-220-3
- Drain To Source Breakdown Voltage
- 60V
- Terminal Kaplaması
- Tin (Sn)
- Dual Supply Voltage
- 60V
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