Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate To Source Voltage Vgs
- 20V
- Reach Svhc
- No SVHC
- Fet Type
- N-Channel
- Kılıf / Paket
- TO-220-3
- Kurşunsuz
- Lead Free
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Through Hole
- Yükseklik
- 9.4mm
- Kurşunsuz Kodu
- yes
- Fall Time Typ
- 145 ns
- Parça Durumu
- Active
- Element Configuration
- Single
- Yayın Yılı
- 2013
- Radyasyon Dayanımı
- No
- Akım Değeri
- 52.4A
- RoHS Durumu
- ROHS3 Compliant
- Jedec95 Code
- TO-220AB
- Genişlik
- 4.7mm
- Seri
- QFET®
- Turn On Delay Time
- 20 ns
- Drive Voltage Max Rds On Min Rds On
- 5V 10V
- Montaj
- Through Hole
- Drain To Source Breakdown Voltage
- 60V
- Terminal Kaplaması
- Tin (Sn)
- Uzunluk
- 10.1mm
- Fabrika Tedarik Süresi
- 9 Weeks
- Gate Charge Qg Max Vgs
- 32nC @ 5V
- Power Dissipation Max
- 121W Tc
- Voltage Rated Dc
- 60V
- Input Capacitance Ciss Max Vds
- 1630pF @ 25V
- Rds On Max Id Vgs
- 21m Ω @ 26.2A, 10V
- Continuous Drain Current Id
- 52A
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Avalanche Energy Rating Eas
- 990 mJ
- Vgs Max
- ±20V
- JESD-609 Kodu
- e3
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Threshold Voltage
- 2.5V
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