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Same-day dispatch from stock
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Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 23nC @ 10V
- Power Dissipation Max
- 85W Tc
- Voltage Rated Dc
- -400V
- Input Capacitance Ciss Max Vds
- 680pF @ 25V
- Drain To Source Voltage Vdss
- 400V
- Rds On Max Id Vgs
- 3.1 Ω @ 1.75A, 10V
- Continuous Drain Current Id
- 3.5A
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Avalanche Energy Rating Eas
- 260 mJ
- Vgs Max
- ±30V
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- JESD-609 Kodu
- e3
- Threshold Voltage
- -5V
- Number Of Elements
- 1
- Turn Off Delay Time
- 35 ns
- Current Continuous Drain Id25
- 3.5A Tc
- Ambalaj
- Tube
- Pin Sayısı
- 3
- ECCN Kodu
- EAR99
- Terminal Sayısı
- 3
- Vgsth Max Id
- 5V @ 250μA
- Weight
- 1.8g
- Power Dissipation
- 85W
- Transistor Application
- SWITCHING
- Rise Time
- 55ns
- Gate To Source Voltage Vgs
- 30V
- Reach Svhc
- No SVHC
- Fet Type
- P-Channel
- Kılıf / Paket
- TO-220-3
- Kurşunsuz
- Lead Free
- Transistor Element Material
- SILICON
- Montaj Tipi
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yükseklik
- 9.4mm
- Kurşunsuz Kodu
- yes
- Fall Time Typ
- 37 ns
- Parça Durumu
- Active
- Element Configuration
- Single
- Yayın Yılı
- 2013
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