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Support
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Specifications
- Input Capacitance Ciss Max Vds
- 960pF @ 25V
- Power Dissipation Max
- 140W Tc
- Voltage Rated Dc
- 900V
- Gate Charge Qg Max Vgs
- 22nC @ 10V
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Avalanche Energy Rating Eas
- 570 mJ
- Continuous Drain Current Id
- 4A
- Drain Currentmax Abs Id
- 4A
- Rds On Max Id Vgs
- 4.2 Ω @ 2A, 10V
- Current Continuous Drain Id25
- 4A Tc
- Ambalaj
- Tube
- Turn Off Delay Time
- 40 ns
- Number Of Elements
- 1
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Threshold Voltage
- 5V
- Vgs Max
- ±30V
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- JESD-609 Kodu
- e3
- Rise Time
- 50ns
- Weight
- 1.8g
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Transistor Application
- SWITCHING
- Power Dissipation
- 140W
- ECCN Kodu
- EAR99
- Terminal Sayısı
- 3
- Vgsth Max Id
- 5V @ 250μA
- Pin Sayısı
- 3
- Kılıf / Paket
- TO-220-3
- Fet Type
- N-Channel
- Gate To Source Voltage Vgs
- 30V
- Reach Svhc
- No SVHC
- Montaj Tipi
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yükseklik
- 9.2mm
- Kurşunsuz Kodu
- yes
- Transistor Element Material
- SILICON
- Kurşunsuz
- Lead Free
- Genişlik
- 4.5mm
- Seri
- QFET®
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