Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Uzunluk
- 10.1mm
- Fabrika Tedarik Süresi
- 8 Weeks
- Drain To Source Breakdown Voltage
- -60V
- Terminal Kaplaması
- Tin (Sn)
- Turn On Delay Time
- 50 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Montaj
- Through Hole
- Genişlik
- 4.7mm
- Seri
- QFET®
- Element Configuration
- Single
- Yayın Yılı
- 2001
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Jedec95 Code
- TO-220AB
- Akım Değeri
- -47A
- Fall Time Typ
- 195 ns
- Parça Durumu
- Active
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Through Hole
- Yükseklik
- 9.4mm
- Kurşunsuz Kodu
- yes
- Transistor Element Material
- SILICON
- Kurşunsuz
- Lead Free
- Kılıf / Paket
- TO-220-3
- Nominal Vgs
- -4 V
- Fet Type
- P-Channel
- Gate To Source Voltage Vgs
- 25V
- Reach Svhc
- No SVHC
- Rise Time
- 450ns
- Weight
- 1.8g
- Power Dissipation
- 160W
- Transistor Application
- SWITCHING
- ECCN Kodu
- EAR99
- Terminal Sayısı
- 3
- Direnç
- 26mOhm
- Vgsth Max Id
- 4V @ 250μA
- Pin Sayısı
- 3
- Current Continuous Drain Id25
- 47A Tc
- Ambalaj
- Tube
- Turn Off Delay Time
- 100 ns
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