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Specifications
- Rds On Max Id Vgs
- 40m Ω @ 22.5A, 10V
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal
- Through Hole
- Continuous Drain Current Id
- 45A
- Gate Charge Qg Max Vgs
- 94nC @ 10V
- Input Capacitance Ciss Max Vds
- 3030pF @ 25V
- Power Dissipation Max
- 220W Tc
- Voltage Rated Dc
- 150V
- ECCN Kodu
- EAR99
- Direnç
- 40mOhm
- Terminal Sayısı
- 3
- Vgsth Max Id
- 4V @ 250μA
- Pin Sayısı
- 3
- Rise Time
- 232ns
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Transistor Application
- SWITCHING
- Power Dissipation
- 220W
- Threshold Voltage
- 4V
- Vgs Max
- ±30V
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- JESD-609 Kodu
- e3
- Current Continuous Drain Id25
- 45A Tc
- Ambalaj
- Tube
- Turn Off Delay Time
- 224 ns
- Number Of Elements
- 1
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Transistor Element Material
- SILICON
- Kurşunsuz
- Lead Free
- Yükseklik
- 9.4mm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Through Hole
- Akım
- 45A
- Kurşunsuz Kodu
- yes
- Fet Type
- N-Channel
- Nominal Vgs
- 4 V
- Gate To Source Voltage Vgs
- 30V
- Reach Svhc
- No SVHC
- Kılıf / Paket
- TO-220-3
- Drain To Source Breakdown Voltage
- 150V
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