FQP3P50

Specifications

Avalanche Energy Rating Eas

250 mJ

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Continuous Drain Current Id

2.7A

Rds On Max Id Vgs

4.9 Ω @ 1.35A, 10V

Drain To Source Voltage Vdss

500V

Input Capacitance Ciss Max Vds

660pF @ 25V

Voltage Rated Dc

-500V

Power Dissipation Max

85W Tc

Gate Charge Qg Max Vgs

23nC @ 10V

Rise Time

56ns

Transistor Application

SWITCHING

Power Dissipation

85W

Weight

1.8g

Vgsth Max Id

5V @ 250μA

Direnç

4.9Ohm

Terminal Sayısı

3

ECCN Kodu

EAR99

Pin Sayısı

3

Ambalaj

Tube

Current Continuous Drain Id25

2.7A Tc

Number Of Elements

1

Turn Off Delay Time

35 ns

JESD-609 Kodu

e3

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Vgs Max

±30V

Kurşunsuz Kodu

yes

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yükseklik

9.4mm

Transistor Element Material

SILICON

Kurşunsuz

Lead Free

Kılıf / Paket

TO-220-3

Fet Type

P-Channel

Nominal Vgs

-5 V

Reach Svhc

No SVHC

Gate To Source Voltage Vgs

30V

Fabrika Tedarik Süresi

8 Weeks

Uzunluk

10.1mm

Dual Supply Voltage

-500V