Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drain To Source Breakdown Voltage
- 800V
- Dual Supply Voltage
- 800V
- Montaj
- Through Hole
- Turn On Delay Time
- 15 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Uzunluk
- 10.1mm
- Fabrika Tedarik Süresi
- 6 Weeks
- Radyasyon Dayanımı
- No
- Yayın Yılı
- 2003
- Element Configuration
- Single
- Akım Değeri
- 3A
- Jedec95 Code
- TO-220AB
- RoHS Durumu
- ROHS3 Compliant
- Parça Durumu
- Active
- Fall Time Typ
- 32 ns
- Contact Plating
- Tin
- Genişlik
- 4.7mm
- Seri
- QFET®
- Transistor Element Material
- SILICON
- Kurşunsuz
- Lead Free
- Montaj Tipi
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yükseklik
- 9.4mm
- Kurşunsuz Kodu
- yes
- Nominal Vgs
- 5 V
- Fet Type
- N-Channel
- Gate To Source Voltage Vgs
- 30V
- Reach Svhc
- No SVHC
- Kılıf / Paket
- TO-220-3
- ECCN Kodu
- EAR99
- Vgsth Max Id
- 5V @ 250μA
- Terminal Sayısı
- 3
- Direnç
- 4.8Ohm
- Pin Sayısı
- 3
- Rise Time
- 43.5ns
- Power Dissipation
- 107W
- Transistor Application
- SWITCHING
- Weight
- 1.8g
- Threshold Voltage
- 5V
- Vgs Max
- ±30V
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