Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yükseklik
- 9.4mm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Through Hole
- Kurşunsuz Kodu
- yes
- Kurşunsuz
- Lead Free
- Transistor Element Material
- SILICON
- Kılıf / Paket
- TO-220-3
- Gate To Source Voltage Vgs
- 30V
- Fet Type
- N-Channel
- Uzunluk
- 10.1mm
- Fabrika Tedarik Süresi
- 5 Weeks
- Turn On Delay Time
- 12 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Montaj
- Through Hole
- Drain To Source Breakdown Voltage
- 800V
- Terminal Kaplaması
- Tin (Sn)
- Genişlik
- 4.7mm
- Seri
- QFET®
- Parça Durumu
- Active
- Fall Time Typ
- 28 ns
- Element Configuration
- Single
- Radyasyon Dayanımı
- No
- Yayın Yılı
- 2000
- Akım Değeri
- 2.4A
- RoHS Durumu
- ROHS3 Compliant
- Jedec95 Code
- TO-220AB
- Continuous Drain Current Id
- 2.4A
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rds On Max Id Vgs
- 6.3 Ω @ 1.2A, 10V
- Pulsed Drain Currentmax Idm
- 9.6A
- Power Dissipation Max
- 85W Tc
- Voltage Rated Dc
- 800V
- Input Capacitance Ciss Max Vds
- 550pF @ 25V
- Gate Charge Qg Max Vgs
- 15nC @ 10V
- Weight
- 1.8g
- Power Dissipation
- 85W
- Transistor Application
- SWITCHING
- Rise Time
- 30ns
- Pin Sayısı
- 3
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