Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Avalanche Energy Rating Eas
- 600 mJ
- Continuous Drain Current Id
- 25.5A
- Rds On Max Id Vgs
- 110m Ω @ 12.75A, 10V
- Input Capacitance Ciss Max Vds
- 2450pF @ 25V
- Voltage Rated Dc
- 250V
- Power Dissipation Max
- 180W Tc
- Gate Charge Qg Max Vgs
- 65nC @ 10V
- Rise Time
- 270ns
- Weight
- 1.8g
- Transistor Application
- SWITCHING
- Power Dissipation
- 180W
- Terminal Sayısı
- 3
- Vgsth Max Id
- 5V @ 250μA
- ECCN Kodu
- EAR99
- Pin Sayısı
- 3
- Current Continuous Drain Id25
- 25.5A Tc
- Ambalaj
- Tube
- Number Of Elements
- 1
- Turn Off Delay Time
- 80 ns
- Lifecycle Status
- ACTIVE (Last Updated: 2 days ago)
- JESD-609 Kodu
- e3
- Vgs Max
- ±30V
- Kurşunsuz Kodu
- yes
- Montaj Tipi
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yükseklik
- 9.4mm
- Transistor Element Material
- SILICON
- Kurşunsuz
- Lead Free
- Kılıf / Paket
- TO-220-3
- Fet Type
- N-Channel
- Nominal Vgs
- 5 V
- Reach Svhc
- No SVHC
- Gate To Source Voltage Vgs
- 30V
- Fabrika Tedarik Süresi
- 8 Weeks
- Uzunluk
- 10.1mm
- Terminal Kaplaması
- Tin (Sn)
- Drain To Source Breakdown Voltage
- 250V
- Drive Voltage Max Rds On Min Rds On
- 10V
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