Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- TO-220-3
- Gate To Source Voltage Vgs
- 25V
- Reach Svhc
- No SVHC
- Fet Type
- N-Channel
- Montaj Tipi
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yükseklik
- 9.4mm
- Kurşunsuz Kodu
- yes
- Kurşunsuz
- Lead Free
- Transistor Element Material
- SILICON
- Genişlik
- 4.7mm
- Seri
- QFET®
- Fall Time Typ
- 20 ns
- Contact Plating
- Tin
- Parça Durumu
- Active
- Element Configuration
- Single
- Radyasyon Dayanımı
- No
- Yayın Yılı
- 2013
- RoHS Durumu
- ROHS3 Compliant
- Jedec95 Code
- TO-220AB
- Akım Değeri
- 20A
- Uzunluk
- 10.1mm
- Fabrika Tedarik Süresi
- 5 Weeks
- Drive Voltage Max Rds On Min Rds On
- 10V
- Turn On Delay Time
- 5 ns
- Montaj
- Through Hole
- Drain To Source Breakdown Voltage
- 60V
- Power Dissipation Max
- 53W Tc
- Voltage Rated Dc
- 60V
- Input Capacitance Ciss Max Vds
- 590pF @ 25V
- Gate Charge Qg Max Vgs
- 15nC @ 10V
- Continuous Drain Current Id
- 20A
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Rds On Max Id Vgs
- 60m Ω @ 10A, 10V
- Pulsed Drain Currentmax Idm
- 80A
- Turn Off Delay Time
- 20 ns
- Number Of Elements
- 1
- Current Continuous Drain Id25
- 20A Tc
- Ambalaj
- Tube
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