Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Nominal Vgs
- -4 V
- Fet Type
- P-Channel
- Max Junction Temperature Tj
- 175°C
- Reach Svhc
- No SVHC
- Gate To Source Voltage Vgs
- 30V
- Kılıf / Paket
- TO-220-3
- Transistor Element Material
- SILICON
- Kurşunsuz
- Lead Free
- Kurşunsuz Kodu
- yes
- Montaj Tipi
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yükseklik
- 20.4mm
- Jedec95 Code
- TO-220AB
- RoHS Durumu
- ROHS3 Compliant
- Akım Değeri
- -16.5A
- Element Configuration
- Single
- Yayın Yılı
- 1999
- Radyasyon Dayanımı
- No
- Contact Plating
- Tin
- Fall Time Typ
- 100 ns
- Parça Durumu
- Active
- Seri
- QFET®
- Genişlik
- 4.7mm
- Dual Supply Voltage
- -100V
- Drain To Source Breakdown Voltage
- -100V
- Turn On Delay Time
- 17 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Montaj
- Through Hole
- Fabrika Tedarik Süresi
- 9 Weeks
- Uzunluk
- 10.1mm
- Gate Charge Qg Max Vgs
- 39nC @ 10V
- Input Capacitance Ciss Max Vds
- 1100pF @ 25V
- Voltage Rated Dc
- -100V
- Power Dissipation Max
- 100W Tc
- Lead Pitch
- 2.54mm
- Pulsed Drain Currentmax Idm
- 66A
- Rds On Max Id Vgs
- 190m Ω @ 8.25A, 10V
- Drain To Source Voltage Vdss
- 100V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Operating Mode
- ENHANCEMENT MODE
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