Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yükseklik
- 16.3mm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Through Hole
- Kurşunsuz Kodu
- yes
- Transistor Element Material
- SILICON
- Kurşunsuz
- Lead Free
- Kılıf / Paket
- TO-220-3
- Fet Type
- N-Channel
- Gate To Source Voltage Vgs
- 30V
- Uzunluk
- 10.67mm
- Fabrika Tedarik Süresi
- 5 Weeks
- Qualification Status
- Not Qualified
- Drain To Source Breakdown Voltage
- 250V
- Terminal Kaplaması
- Tin (Sn)
- Montaj
- Through Hole
- Turn On Delay Time
- 17 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Genişlik
- 4.7mm
- Seri
- QFET®
- Yayın Yılı
- 2013
- Element Configuration
- Single
- Akım Değeri
- 16A
- Jedec95 Code
- TO-220AB
- RoHS Durumu
- ROHS3 Compliant
- Parça Durumu
- Active
- Fall Time Typ
- 75 ns
- Avalanche Energy Rating Eas
- 560 mJ
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Continuous Drain Current Id
- 16A
- Pulsed Drain Currentmax Idm
- 64A
- Rds On Max Id Vgs
- 230m Ω @ 8A, 10V
- Input Capacitance Ciss Max Vds
- 1200pF @ 25V
- Power Dissipation Max
- 142W Tc
- Voltage Rated Dc
- 250V
- Gate Charge Qg Max Vgs
- 35nC @ 10V
- Rise Time
- 140ns
- Power Dissipation
- 50W
- Transistor Application
- SWITCHING
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
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