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Specifications
- Voltage Rated Dc
- 100V
- Power Dissipation Max
- 65W Tc
- Input Capacitance Ciss Max Vds
- 520pF @ 25V
- Gate Charge Qg Max Vgs
- 12nC @ 5V
- Continuous Drain Current Id
- 12.8A
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Avalanche Energy Rating Eas
- 95 mJ
- Rds On Max Id Vgs
- 180m Ω @ 6.4A, 10V
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Number Of Elements
- 1
- Turn Off Delay Time
- 22 ns
- Current Continuous Drain Id25
- 12.8A Tc
- Ambalaj
- Tube
- Lifecycle Status
- ACTIVE (Last Updated: 2 days ago)
- JESD-609 Kodu
- e3
- Vgs Max
- ±20V
- Threshold Voltage
- 2V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Weight
- 1.8g
- Power Dissipation
- 65W
- Transistor Application
- SWITCHING
- Rise Time
- 220ns
- Pin Sayısı
- 3
- Additional Feature
- FAST SWITCHING
- Direnç
- 180mOhm
- Terminal Sayısı
- 3
- Vgsth Max Id
- 2V @ 250μA
- ECCN Kodu
- EAR99
- Kılıf / Paket
- TO-220-3
- Reach Svhc
- No SVHC
- Gate To Source Voltage Vgs
- 20V
- Fet Type
- N-Channel
- Kurşunsuz Kodu
- yes
- Montaj Tipi
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yükseklik
- 9.4mm
- Kurşunsuz
- Lead Free
- Transistor Element Material
- SILICON
- Seri
- QFET®
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