Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Uzunluk
- 10.36mm
- Drain To Source Breakdown Voltage
- 600V
- Dual Supply Voltage
- 600V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Turn On Delay Time
- 23 ns
- Montaj
- Through Hole
- Genişlik
- 4.67mm
- Seri
- QFET®
- Element Configuration
- Single
- Yayın Yılı
- 2007
- RoHS Durumu
- RoHS Compliant
- Jedec95 Code
- TO-220AB
- Akım Değeri
- 9.5A
- Parça Durumu
- Obsolete
- Fall Time Typ
- 77 ns
- Montaj Tipi
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yükseklik
- 8.79mm
- Kurşunsuz Kodu
- yes
- Transistor Element Material
- SILICON
- Kurşunsuz
- Lead Free
- Kılıf / Paket
- TO-220-3
- Fet Type
- N-Channel
- Nominal Vgs
- 4 V
- Gate To Source Voltage Vgs
- 30V
- Reach Svhc
- No SVHC
- Rise Time
- 69ns
- Weight
- 1.8g
- Transistor Application
- SWITCHING
- Power Dissipation
- 156W
- Direnç
- 730mOhm
- Terminal Sayısı
- 3
- Vgsth Max Id
- 4V @ 250μA
- Pin Sayısı
- 3
- Current Continuous Drain Id25
- 9.5A Tc
- Ambalaj
- Tube
- Number Of Elements
- 1
- Turn Off Delay Time
- 144 ns
- Threshold Voltage
- 4V
- Vgs Max
- ±30V
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