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Specifications
- Rds On Max Id Vgs
- 11.5 Ω @ 150mA, 10V
- Terminal Pozisyonu
- BOTTOM
- Continuous Drain Current Id
- 300mA
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Gate Charge Qg Max Vgs
- 6.2nC @ 10V
- Feedback Capmax Crss
- 6 pF
- Power Dissipation Max
- 1W Ta 3W Tc
- Input Capacitance Ciss Max Vds
- 170pF @ 25V
- Pin Sayısı
- 3
- Vgsth Max Id
- 4V @ 250μA
- Terminal Sayısı
- 3
- Direnç
- 11.5Ohm
- ECCN Kodu
- EAR99
- Transistor Application
- SWITCHING
- Power Dissipation
- 1W
- Weight
- 240mg
- Rise Time
- 21ns
- JESD-609 Kodu
- e3
- Lifecycle Status
- ACTIVE (Last Updated: 2 days ago)
- Vgs Max
- ±30V
- Threshold Voltage
- 4V
- Number Of Elements
- 1
- Turn Off Delay Time
- 13 ns
- Ambalaj
- Tape & Box (TB)
- Current Continuous Drain Id25
- 300mA Tc
- Kurşunsuz
- Lead Free
- Transistor Element Material
- SILICON
- Kurşunsuz Kodu
- yes
- Montaj Tipi
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yükseklik
- 5.33mm
- Reach Svhc
- No SVHC
- Gate To Source Voltage Vgs
- 30V
- Fet Type
- N-Channel
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Montaj
- Through Hole
- Drive Voltage Max Rds On Min Rds On
- 10V
- Turn On Delay Time
- 7 ns
- Terminal Kaplaması
- Tin (Sn)
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