Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Uzunluk
- 5.2mm
- Fabrika Tedarik Süresi
- 6 Weeks
- Drain To Source Breakdown Voltage
- 500V
- Terminal Kaplaması
- Tin (Sn)
- Montaj
- Through Hole
- Drive Voltage Max Rds On Min Rds On
- 10V
- Turn On Delay Time
- 10 ns
- Genişlik
- 4.19mm
- Seri
- QFET®
- Radyasyon Dayanımı
- No
- Yayın Yılı
- 2013
- Element Configuration
- Single
- RoHS Durumu
- ROHS3 Compliant
- Fall Time Typ
- 10 ns
- Parça Durumu
- Active
- Montaj Tipi
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yükseklik
- 5.33mm
- Kurşunsuz Kodu
- yes
- Transistor Element Material
- SILICON
- Kurşunsuz
- Lead Free
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Fet Type
- N-Channel
- Gate To Source Voltage Vgs
- 30V
- Reach Svhc
- No SVHC
- Rise Time
- 10ns
- Transistor Application
- SWITCHING
- Power Dissipation
- 890mW
- Weight
- 240mg
- ECCN Kodu
- EAR99
- Vgsth Max Id
- 4V @ 250μA
- Direnç
- 6Ohm
- Terminal Sayısı
- 3
- Pin Sayısı
- 3
- Ambalaj
- Tape & Box (TB)
- Current Continuous Drain Id25
- 380mA Tc
- Number Of Elements
- 1
- Turn Off Delay Time
- 20 ns
- Threshold Voltage
- 4V
- Vgs Max
- ±30V
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