Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Dissipation Max
- 3.13W Ta 147W Tc
- Voltage Rated Dc
- 600V
- Input Capacitance Ciss Max Vds
- 1255pF @ 25V
- Kılıf / Paket
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Gate To Source Voltage Vgs
- 30V
- Gate Charge Qg Max Vgs
- 36nC @ 10V
- Fet Type
- N-Channel
- Continuous Drain Current Id
- 7.5A
- Avalanche Energy Rating Eas
- 230 mJ
- Montaj Tipi
- Through Hole
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kurşunsuz Kodu
- yes
- Kurşunsuz
- Lead Free
- Rds On Max Id Vgs
- 1.2 Ω @ 3.75A, 10V
- Transistor Element Material
- SILICON
- Pulsed Drain Currentmax Idm
- 30A
- Turn Off Delay Time
- 81 ns
- Number Of Elements
- 1
- Jesd30 Code
- R-PSIP-T3
- Seri
- QFET®
- Ambalaj
- Tube
- Current Continuous Drain Id25
- 7.5A Tc
- Vgs Max
- ±30V
- JESD-609 Kodu
- e3
- Lifecycle Status
- ACTIVE (Last Updated: 2 days ago)
- Parça Durumu
- Active
- Fall Time Typ
- 64.5 ns
- Yayın Yılı
- 2013
- Radyasyon Dayanımı
- No
- Element Configuration
- Single
- RoHS Durumu
- ROHS3 Compliant
- Akım Değeri
- 8A
- Transistor Application
- SWITCHING
- Fabrika Tedarik Süresi
- 4 Weeks
- Power Dissipation
- 3.13W
- Weight
- 2.084g
- Rise Time
- 60.5ns
- Montaj
- Through Hole
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