FQI4N80TU

Specifications

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Fet Type

N-Channel

Gate To Source Voltage Vgs

30V

Kurşunsuz Kodu

yes

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yükseklik

9.2mm

Transistor Element Material

SILICON

Kurşunsuz

Lead Free

Seri

QFET®

Genişlik

4.5mm

RoHS Durumu

ROHS3 Compliant

Akım Değeri

3.9A

Element Configuration

Single

Radyasyon Dayanımı

No

Yayın Yılı

2007

Fall Time Typ

35 ns

Parça Durumu

Active

Fabrika Tedarik Süresi

8 Weeks

Uzunluk

9.9mm

Terminal Kaplaması

Tin (Sn)

Drain To Source Breakdown Voltage

800V

Drive Voltage Max Rds On Min Rds On

10V

Turn On Delay Time

16 ns

Montaj

Through Hole

Input Capacitance Ciss Max Vds

880pF @ 25V

Voltage Rated Dc

800V

Power Dissipation Max

3.13W Ta 130W Tc

Gate Charge Qg Max Vgs

25nC @ 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Avalanche Energy Rating Eas

460 mJ

Continuous Drain Current Id

3.9A

Rds On Max Id Vgs

3.6 Ω @ 1.95A, 10V

Current Continuous Drain Id25

3.9A Tc

Ambalaj

Tube

Number Of Elements

1

Turn Off Delay Time

35 ns

JESD-609 Kodu

e3

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)