Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Kurşunsuz
- Lead Free
- Drainsource On Resistancemax
- 0.48Ohm
- Montaj Tipi
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kurşunsuz Kodu
- yes
- Fet Type
- N-Channel
- Gate To Source Voltage Vgs
- 30V
- Kılıf / Paket
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Drain To Source Breakdown Voltage
- 500V
- Terminal Kaplaması
- Tin (Sn)
- Turn On Delay Time
- 25 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Montaj
- Through Hole
- Fabrika Tedarik Süresi
- 4 Weeks
- Element Configuration
- Single
- Yayın Yılı
- 2013
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Akım Değeri
- 13A
- Parça Durumu
- Active
- Fall Time Typ
- 100 ns
- Jesd30 Code
- R-PSIP-T3
- Seri
- QFET®
- Pulsed Drain Currentmax Idm
- 52A
- Rds On Max Id Vgs
- 480m Ω @ 6.5A, 10V
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Avalanche Energy Rating Eas
- 860 mJ
- Continuous Drain Current Id
- 13A
- Gate Charge Qg Max Vgs
- 56nC @ 10V
- Input Capacitance Ciss Max Vds
- 2055pF @ 25V
- Power Dissipation Max
- 195W Tc
- Voltage Rated Dc
- 500V
- ECCN Kodu
- EAR99
- Terminal Sayısı
- 3
- Additional Feature
- FAST SWITCHING
- Vgsth Max Id
- 4V @ 250μA
- Rise Time
- 100ns
- Weight
- 2.084g
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