FQH44N10-F133

Specifications

Gate To Source Voltage Vgs

25V

Gate Charge Qg Max Vgs

62nC @ 10V

Fet Type

N-Channel

Power Dissipation Max

180W Tc

Kılıf / Paket

TO-247-3

Input Capacitance Ciss Max Vds

1800pF @ 25V

Rds On Max Id Vgs

39m Ω @ 24A, 10V

Drainsource On Resistancemax

0.039Ohm

Pulsed Drain Currentmax Idm

192A

Transistor Element Material

SILICON

Continuous Drain Current Id

48A

Kurşunsuz Kodu

yes

Avalanche Energy Rating Eas

530 mJ

Montaj Tipi

Through Hole

Çalışma Sıcaklığı

-55°C~175°C TJ

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Parça Durumu

Active

Fall Time Typ

100 ns

Vgs Max

±25V

Jedec95 Code

TO-247AB

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Element Configuration

Single

Turn Off Delay Time

90 ns

Number Of Elements

1

Seri

QFET®

Ambalaj

Tube

Current Continuous Drain Id25

48A Tc

Jesd30 Code

R-PSFM-T3

Montaj

Through Hole

Turn On Delay Time

19 ns

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

4V @ 250μA

Terminal Sayısı

3

Drain To Source Breakdown Voltage

100V

Transistor Application

SWITCHING

Fabrika Tedarik Süresi

4 Weeks

Power Dissipation

180W