FQD9N25TM-F080

Specifications

Rise Time

105ns

Case Connection

DRAIN

Transistor Application

SWITCHING

Fabrika Tedarik Süresi

4 Weeks

Power Dissipation

2.5W

Weight

260.37mg

Drain To Source Breakdown Voltage

250V

Vgsth Max Id

5V @ 250μA

Terminal Sayısı

2

Pin Sayısı

3

Montaj

Surface Mount

Turn On Delay Time

13 ns

Drive Voltage Max Rds On Min Rds On

10V

Jesd30 Code

R-PSSO-G2

Seri

QFET®

Ambalaj

Tape & Reel (TR)

Current Continuous Drain Id25

7.4A Tc

Turn Off Delay Time

25 ns

Number Of Elements

1

Radyasyon Dayanımı

No

Element Configuration

Single

Jedec95 Code

TO-252AB

RoHS Durumu

ROHS3 Compliant

Vgs Max

±30V

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

Parça Durumu

Active

Fall Time Typ

45 ns

Avalanche Energy Rating Eas

165 mJ

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Surface Mount

Terminal Formu

GULL WING

Kurşunsuz Kodu

yes

Continuous Drain Current Id

7.4A

Pulsed Drain Currentmax Idm

29.6A

Transistor Element Material

SILICON

Drainsource On Resistancemax

0.42Ohm

Rds On Max Id Vgs

420m Ω @ 3.7A, 10V

Input Capacitance Ciss Max Vds

700pF @ 25V