FQD9N25TM

Specifications

Transistor Element Material

SILICON

Drainsource On Resistancemax

0.42Ohm

Kurşunsuz

Lead Free

Montaj Tipi

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Formu

GULL WING

Kurşunsuz Kodu

yes

Fet Type

N-Channel

Gate To Source Voltage Vgs

30V

Reach Svhc

No SVHC

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain To Source Breakdown Voltage

250V

Terminal Kaplaması

Tin (Sn)

Montaj

Surface Mount

Drive Voltage Max Rds On Min Rds On

10V

Turn On Delay Time

13 ns

Fabrika Tedarik Süresi

4 Weeks

Radyasyon Dayanımı

No

Element Configuration

Single

RoHS Durumu

ROHS3 Compliant

Akım Değeri

7.4A

Fall Time Typ

45 ns

Parça Durumu

Active

Jesd30 Code

R-PSSO-G2

Seri

QFET®

Pulsed Drain Currentmax Idm

29.6A

Rds On Max Id Vgs

420m Ω @ 3.7A, 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

7.4A

Gate Charge Qg Max Vgs

20nC @ 10V

Input Capacitance Ciss Max Vds

700pF @ 25V

Power Dissipation Max

2.5W Ta 55W Tc

Voltage Rated Dc

250V

ECCN Kodu

EAR99

Vgsth Max Id

5V @ 250μA

Terminal Sayısı

2

Pin Sayısı

3

Rise Time

105ns

Case Connection

DRAIN