FQD6N50CTM

Specifications

Gate To Source Voltage Vgs

30V

Fet Type

N-Channel

Gate Charge Qg Max Vgs

25nC @ 10V

Power Dissipation Max

2.5W Ta 61W Tc

Voltage Rated Dc

500V

Input Capacitance Ciss Max Vds

700pF @ 25V

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Kurşunsuz

Lead Free

Rds On Max Id Vgs

1.2 Ω @ 2.25A, 10V

Transistor Element Material

SILICON

Continuous Drain Current Id

4.5A

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz Kodu

yes

Terminal Formu

GULL WING

Vgs Max

±30V

Fall Time Typ

45 ns

Parça Durumu

Active

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

JESD-609 Kodu

e3

Element Configuration

Single

Radyasyon Dayanımı

No

Akım Değeri

4.5A

RoHS Durumu

ROHS3 Compliant

Turn Off Delay Time

55 ns

Number Of Elements

1

Jesd30 Code

R-PSSO-G2

Current Continuous Drain Id25

4.5A Tc

Seri

QFET®

Ambalaj

Tape & Reel (TR)

Drive Voltage Max Rds On Min Rds On

10V

Turn On Delay Time

10 ns

Montaj

Surface Mount

Pin Sayısı

3

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

500V

Terminal Sayısı

2

Terminal Kaplaması

Tin (Sn)