FQD3P50TM-F085

Specifications

Terminal Pozisyonu

SINGLE

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Application

SWITCHING

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

Input Capacitance Ciss Max Vds

660pF @ 25V

Case Connection

DRAIN

REACH Uyumluluk Kodu

not_compliant

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

yes

Current Continuous Drain Id25

2.1A Tc

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

8.4A

Yüzey Montaj

YES

Avalanche Energy Rating Eas

250 mJ

Jesd30 Code

R-PSSO-G2

Ds Breakdown Voltagemin

500V

Rds On Max Id Vgs

4.9 Ω @ 1.05A, 10V

Tepe Reflow Sıcaklığı (°C)

260

Power Dissipation Max

2.5W Ta 50W Tc

Fet Type

P-Channel

Vgsth Max Id

5V @ 250μA

Seri

Automotive, AEC-Q101, QFET®

Vgs Max

±30V

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Voltage Vdss

500V

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Gate Charge Qg Max Vgs

23nC @ 10V

Ambalaj

Tape & Reel (TR)

Configuration

SINGLE WITH BUILT-IN DIODE

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Qualification Status

Not Qualified

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

30

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Active