FQD3N60CTM-WS

Specifications

Terminal Formu

GULL WING

Radyasyon Dayanımı

No

Fall Time Typ

35 ns

Pulsed Drain Currentmax Idm

9.6A

Pin Sayısı

3

Jesd30 Code

R-PSSO-G2

Gate To Source Voltage Vgs

30V

Turn Off Delay Time

35 ns

Rds On Max Id Vgs

3.4 Ω @ 1.2A, 10V

Ds Breakdown Voltagemin

600V

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

2

Number Of Elements

1

Terminal Kaplaması

Tin (Sn)

Transistor Application

SWITCHING

Case Connection

DRAIN

Input Capacitance Ciss Max Vds

565pF @ 25V

Turn On Delay Time

12 ns

Kurşunsuz Kodu

yes

Current Continuous Drain Id25

2.4A Tc

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Element Configuration

Single

Continuous Drain Current Id

2.4A

Gate Charge Qg Max Vgs

14nC @ 10V

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Jedec95 Code

TO-252AA

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Fabrika Tedarik Süresi

11 Weeks

Power Dissipation

50W

Power Dissipation Max

50W Tc

Kurşunsuz

Lead Free

Vgsth Max Id

4V @ 250μA

Fet Type

N-Channel

Rise Time

30ns

Drain To Source Voltage Vdss

600V

Drive Voltage Max Rds On Min Rds On

10V