FQD30N06TM

Specifications

Avalanche Energy Rating Eas

280 mJ

Gate To Source Voltage Vgs

25V

Jesd30 Code

R-PSSO-G2

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ds Breakdown Voltagemin

60V

Rds On Max Id Vgs

45m Ω @ 11.4A, 10V

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

90.8A

Drainsource On Resistancemax

0.045Ohm

Pin Sayısı

3

Input Capacitance Ciss Max Vds

945pF @ 25V

Case Connection

DRAIN

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

22.7A Tc

Kurşunsuz Kodu

yes

REACH Uyumluluk Kodu

not_compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

2

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

Transistor Application

SWITCHING

RoHS Durumu

ROHS3 Compliant

Qualification Status

Not Qualified

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Element Material

SILICON

Parça Durumu

Active

Fabrika Tedarik Süresi

11 Weeks

Element Configuration

Single

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

25nC @ 10V

Continuous Drain Current Id

22.7A

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Kodu

EAR99

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Voltage Vdss

60V

Seri

QFET®

Vgs Max

±25V

Weight

260.37mg

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)