FQD2N80TM

Specifications

Genişlik

6.1mm

Element Configuration

Single

ECCN Kodu

EAR99

Max Junction Temperature Tj

150°C

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Fabrika Tedarik Süresi

4 Weeks

Power Dissipation Max

2.5W Ta 50W Tc

Kurşunsuz

Lead Free

Yükseklik

2.517mm

Uzunluk

6.6mm

Rise Time

30ns

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Montaj

Surface Mount

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

7.2A

Fall Time Typ

28 ns

Pin Sayısı

3

Jesd30 Code

R-PSSO-G2

Rds On Max Id Vgs

6.3 Ω @ 900mA, 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Threshold Voltage

3V

Terminal Sayısı

2

Voltage Rated Dc

800V

Transistor Application

SWITCHING

Case Connection

DRAIN

Direnç

6.3Ohm

Turn On Delay Time

12 ns

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

yes

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

15nC @ 10V

Continuous Drain Current Id

1.8A

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Power Dissipation

2.5W

Number Of Channels

1