FQD2N100TM

Specifications

Turn Off Delay Time

25 ns

Contact Plating

Tin

Gate To Source Voltage Vgs

30V

Radyasyon Dayanımı

No

Current Continuous Drain Id25

1.6A Tc

Input Capacitance Ciss Max Vds

520pF @ 25V

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Ambalaj

Tape & Reel (TR)

Continuous Drain Current Id

1.6A

Gate Charge Qg Max Vgs

15.5nC @ 10V

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Drain To Source Voltage Vdss

1000V

Reach Svhc

No SVHC

Vgs Max

±30V

Weight

260.37mg

Akım Değeri

1.6A

Seri

QFET®

Nominal Vgs

5 V

Vgsth Max Id

5V @ 250μA

Number Of Channels

1

Drain To Source Breakdown Voltage

1kV

Yayın Yılı

2013

Power Dissipation

2.5W

Rds On Max Id Vgs

9 Ω @ 800mA, 10V

Jesd30 Code

R-PSSO-G2

Fall Time Typ

35 ns

Pulsed Drain Currentmax Idm

6.4A

Pin Sayısı

3

Terminal Formu

GULL WING

Kurşunsuz Kodu

yes

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

Direnç

9Ohm

Turn On Delay Time

13 ns

Voltage Rated Dc

900V

Transistor Application

SWITCHING