Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Turn Off Delay Time
- 20 ns
- Gate To Source Voltage Vgs
- 25V
- Radyasyon Dayanımı
- No
- Akım
- 18A
- Current Continuous Drain Id25
- 16.8A Tc
- Input Capacitance Ciss Max Vds
- 590pF @ 25V
- Number Of Elements
- 1
- Terminal Kaplaması
- Tin (Sn)
- Gerilim
- 55V
- RoHS Durumu
- ROHS3 Compliant
- Transistor Element Material
- SILICON
- Kılıf / Paket
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Ambalaj
- Tape & Reel (TR)
- Continuous Drain Current Id
- 16.8A
- Gate Charge Qg Max Vgs
- 15nC @ 10V
- Montaj Tipi
- Surface Mount
- JESD-609 Kodu
- e3
- Reach Svhc
- No SVHC
- Vgs Max
- ±25V
- Seri
- QFET®
- Akım Değeri
- 16.8A
- Vgsth Max Id
- 4V @ 250μA
- Yayın Yılı
- 2001
- Drain To Source Breakdown Voltage
- 60V
- Power Dissipation
- 2.5W
- Rds On Max Id Vgs
- 63m Ω @ 8.4A, 10V
- Jesd30 Code
- R-PSSO-G2
- Fall Time Typ
- 25 ns
- Pin Sayısı
- 3
- Terminal Formu
- GULL WING
- Kurşunsuz Kodu
- yes
- Operating Mode
- ENHANCEMENT MODE
- Case Connection
- DRAIN
- Turn On Delay Time
- 5 ns
- Voltage Rated Dc
- 60V
- Transistor Application
- SWITCHING
- Threshold Voltage
- 4V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Sayısı
- 2
- Parça Durumu
- Active
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