FQD12P10TM-F085

Specifications

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

30

Nem Hassasiyeti (MSL)

1 (Unlimited)

Qualification Status

Not Qualified

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Active

Gate Charge Qg Max Vgs

27nC @ 10V

Ambalaj

Tape & Reel (TR)

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs Max

±30V

Seri

Automotive, AEC-Q101

Drain To Source Voltage Vdss

100V

Drive Voltage Max Rds On Min Rds On

10V

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Power Dissipation Max

2.5W Ta 50W Tc

Fet Type

P-Channel

Vgsth Max Id

4V @ 250μA

Avalanche Energy Rating Eas

370 mJ

Jesd30 Code

R-PSSO-G2

Yüzey Montaj

YES

Rds On Max Id Vgs

290m Ω @ 4.7A, 10V

Ds Breakdown Voltagemin

100V

Tepe Reflow Sıcaklığı (°C)

260

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

37.6A

Case Connection

DRAIN

Input Capacitance Ciss Max Vds

800pF @ 25V

REACH Uyumluluk Kodu

not_compliant

Current Continuous Drain Id25

9.4A Tc

Operating Mode

ENHANCEMENT MODE

Terminal Sayısı

2

Terminal Pozisyonu

SINGLE

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Application

SWITCHING

Number Of Elements

1

Terminal Kaplaması

Tin (Sn)