FQD12P10TM

Specifications

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

9.4A Tc

Input Capacitance Ciss Max Vds

800pF @ 25V

Case Connection

DRAIN

Transistor Application

SWITCHING

Terminal Kaplaması

Tin (Sn)

Voltage Rated Dc

-100V

Number Of Elements

1

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~150°C TJ

Rds On Max Id Vgs

290m Ω @ 4.7A, 10V

Tepe Reflow Sıcaklığı (°C)

260

Turn Off Delay Time

35 ns

Avalanche Energy Rating Eas

370 mJ

Gate To Source Voltage Vgs

30V

Jesd30 Code

R-PSSO-G2

Pulsed Drain Currentmax Idm

37.6A

Fall Time Typ

60 ns

Terminal Formu

GULL WING

Montaj

Surface Mount

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Seri

QFET®

Akım Değeri

-9.4A

Vgs Max

±30V

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Voltage Vdss

100V

Rise Time

160ns

Fet Type

P-Channel

Drain To Source Breakdown Voltage

-100V

Yayın Yılı

2002

Vgsth Max Id

4V @ 250μA

Kurşunsuz

Lead Free

Power Dissipation Max

2.5W Ta 50W Tc

Power Dissipation

2.5W

Parça Durumu

Obsolete

Qualification Status

Not Qualified

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

30