FQD12N20LTM-F085

Specifications

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

9A Tc

Input Capacitance Ciss Max Vds

1080pF @ 25V

Case Connection

DRAIN

Turn On Delay Time

15 ns

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

2

Tepe Reflow Sıcaklığı (°C)

260

Turn Off Delay Time

60 ns

Rds On Max Id Vgs

280m Ω @ 4.5A, 10V

Gate To Source Voltage Vgs

20V

Jesd30 Code

R-PSSO-G2

Fall Time Typ

120 ns

Pin Sayısı

3

Terminal Formu

GULL WING

Radyasyon Dayanımı

No

Montaj

Surface Mount

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Drive Voltage Max Rds On Min Rds On

5V 10V

Seri

Automotive, AEC-Q101, QFET®

Vgs Max

±20V

Vgsth Max Id

2V @ 250μA

Fet Type

N-Channel

Rise Time

190ns

Drain To Source Breakdown Voltage

200V

Power Dissipation Max

2.5W Ta 55W Tc

Power Dissipation

2.5W

Kurşunsuz

Lead Free

Parça Durumu

Not For New Designs

Fabrika Tedarik Süresi

36 Weeks

RoHS Durumu

ROHS3 Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

30

Transistor Element Material

SILICON

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Kodu

EAR99