FQD12N20LTM

Specifications

ECCN Kodu

EAR99

Genişlik

6.1mm

Element Configuration

Single

Fabrika Tedarik Süresi

7 Weeks

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rise Time

190ns

Fet Type

N-Channel

Kurşunsuz

Lead Free

Yükseklik

2.3mm

Uzunluk

6.6mm

Power Dissipation Max

2.5W Ta 55W Tc

Montaj

Surface Mount

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Drive Voltage Max Rds On Min Rds On

5V 10V

Pin Sayısı

3

Fall Time Typ

120 ns

Terminal Formu

GULL WING

Rds On Max Id Vgs

280m Ω @ 4.5A, 10V

Jesd30 Code

R-PSSO-G2

Transistor Application

SWITCHING

Voltage Rated Dc

200V

Terminal Sayısı

2

Threshold Voltage

2V

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

yes

Drain Currentmax Abs Id

9A

Direnç

280mOhm

Turn On Delay Time

15 ns

Case Connection

DRAIN

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge Qg Max Vgs

21nC @ 5V

Continuous Drain Current Id

9A

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2001

Drain To Source Breakdown Voltage

200V

Vgsth Max Id

2V @ 250μA