FQB8N90CTM

Specifications

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge Qg Max Vgs

45nC @ 10V

Continuous Drain Current Id

6.3A

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Drain To Source Breakdown Voltage

900V

Vgsth Max Id

5V @ 250μA

Number Of Channels

1

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Seri

QFET®

Weight

1.31247g

Vgs Max

±30V

Turn Off Delay Time

70 ns

Avalanche Energy Rating Eas

850 mJ

Gate To Source Voltage Vgs

30V

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

Current Continuous Drain Id25

6.3A Tc

Input Capacitance Ciss Max Vds

2080pF @ 25V

ECCN Kodu

EAR99

Genişlik

9.65mm

Element Configuration

Single

Fabrika Tedarik Süresi

11 Weeks

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fet Type

N-Channel

Rise Time

110ns

Uzunluk

10.67mm

Yükseklik

4.83mm

Power Dissipation Max

171W Tc

Montaj

Surface Mount

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

70 ns

Pulsed Drain Currentmax Idm

25A

Terminal Formu

GULL WING

Rds On Max Id Vgs

1.9 Ω @ 3.15A, 10V