FQB6N80TM

Specifications

ECCN Kodu

EAR99

Genişlik

9.65mm

Element Configuration

Single

Parça Durumu

Active

Fabrika Tedarik Süresi

4 Weeks

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rise Time

70ns

Fet Type

N-Channel

Power Dissipation Max

3.13W Ta 158W Tc

Uzunluk

10.67mm

Yükseklik

4.83mm

Kurşunsuz

Lead Free

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Montaj

Surface Mount

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

45 ns

Pin Sayısı

3

Terminal Formu

GULL WING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Rds On Max Id Vgs

1.95 Ω @ 2.9A, 10V

Jesd30 Code

R-PSSO-G2

Voltage Rated Dc

800V

Transistor Application

SWITCHING

Threshold Voltage

5V

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

2

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

yes

REACH Uyumluluk Kodu

not_compliant

Case Connection

DRAIN

Turn On Delay Time

30 ns

Direnç

1.95Ohm

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

31nC @ 10V

Continuous Drain Current Id

5.8A

RoHS Durumu

ROHS3 Compliant

Qualification Status

Not Qualified

Transistor Element Material

SILICON