FQB44N10TM

Specifications

Rds On Max Id Vgs

39m Ω @ 21.75A, 10V

Jesd30 Code

R-PSSO-G2

Fall Time Typ

100 ns

Pin Sayısı

3

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

yes

Case Connection

DRAIN

Turn On Delay Time

19 ns

Voltage Rated Dc

100V

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Sayısı

2

Parça Durumu

Active

Fabrika Tedarik Süresi

4 Weeks

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Genişlik

9.65mm

Element Configuration

Single

Lifecycle Status

ACTIVE (Last Updated: 22 hours ago)

Montaj

Surface Mount

Drive Voltage Max Rds On Min Rds On

10V

Rise Time

190ns

Fet Type

N-Channel

Power Dissipation Max

3.75W Ta 146W Tc

Uzunluk

10.67mm

Yükseklik

4.83mm

Kurşunsuz

Lead Free

Turn Off Delay Time

90 ns

Gate To Source Voltage Vgs

25V

Radyasyon Dayanımı

No

Current Continuous Drain Id25

43.5A Tc

Input Capacitance Ciss Max Vds

1800pF @ 25V

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

62nC @ 10V