FQB34P10TM-F085

Specifications

Drain To Source Voltage Vdss

100V

Drive Voltage Max Rds On Min Rds On

10V

Vgs Max

±25V

Weight

1.31247g

Seri

Automotive, AEC-Q101, QFET®

Montaj

Surface Mount

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Power Dissipation

3.75W

Power Dissipation Max

3.75W Ta 155W Tc

Vgsth Max Id

4V @ 250μA

Yayın Yılı

2004

Drain To Source Breakdown Voltage

-100V

Rise Time

250ns

Fet Type

P-Channel

RoHS Durumu

ROHS3 Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Parça Durumu

Active

Ambalaj

Tape & Reel (TR)

Element Configuration

Single

Continuous Drain Current Id

33.5A

Gate Charge Qg Max Vgs

110nC @ 10V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection

DRAIN

Input Capacitance Ciss Max Vds

2910pF @ 25V

Turn On Delay Time

25 ns

Current Continuous Drain Id25

33.5A Tc

Kurşunsuz Kodu

yes

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Sayısı

2

Number Of Elements

1

Terminal Kaplaması

Tin (Sn)

Transistor Application

SWITCHING

Avalanche Energy Rating Eas

2200 mJ

Gate To Source Voltage Vgs

25V

Jesd30 Code

R-PSSO-G2

Turn Off Delay Time

160 ns

Rds On Max Id Vgs

60m Ω @ 16.75A, 10V