FQB34N20TM-AM002

Specifications

Rds On Max Id Vgs

75m Ω @ 15.5A, 10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Jesd30 Code

R-PSSO-G2

Pin Sayısı

3

Fall Time Typ

115 ns

Terminal Formu

GULL WING

REACH Uyumluluk Kodu

not_compliant

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

yes

Turn On Delay Time

40 ns

Case Connection

DRAIN

Transistor Application

SWITCHING

Voltage Rated Dc

200V

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~150°C TJ

Fabrika Tedarik Süresi

4 Weeks

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Element Configuration

Single

Montaj

Surface Mount

Lifecycle Status

ACTIVE (Last Updated: 21 hours ago)

Drive Voltage Max Rds On Min Rds On

10V

Fet Type

N-Channel

Rise Time

280ns

Kurşunsuz

Lead Free

Power Dissipation Max

3.13W Ta 180W Tc

Contact Plating

Tin

Turn Off Delay Time

125 ns

Avalanche Energy Rating Eas

640 mJ

Gate To Source Voltage Vgs

30V

Drainsource On Resistancemax

0.075Ohm

Current Continuous Drain Id25

31A Tc

Input Capacitance Ciss Max Vds

3100pF @ 25V

Number Of Elements

1

Qualification Status

Not Qualified

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge Qg Max Vgs

78nC @ 10V