Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Elements
- 1
- Input Capacitance Ciss Max Vds
- 1500pF @ 25V
- Current Continuous Drain Id25
- 33A Tc
- Gate To Source Voltage Vgs
- 25V
- Contact Plating
- Tin
- Turn Off Delay Time
- 80 ns
- Power Dissipation
- 3.75W
- Yayın Yılı
- 2000
- Drain To Source Breakdown Voltage
- 100V
- Vgsth Max Id
- 4V @ 250μA
- Seri
- QFET®
- Akım Değeri
- 33A
- Vgs Max
- ±25V
- Weight
- 1.31247g
- Reach Svhc
- No SVHC
- JESD-609 Kodu
- e3
- Montaj Tipi
- Surface Mount
- Gate Charge Qg Max Vgs
- 51nC @ 10V
- Continuous Drain Current Id
- 33A
- Ambalaj
- Tape & Reel (TR)
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Qualification Status
- Not Qualified
- Transistor Element Material
- SILICON
- RoHS Durumu
- ROHS3 Compliant
- Terminal Sayısı
- 2
- Threshold Voltage
- 4V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Transistor Application
- SWITCHING
- Voltage Rated Dc
- 100V
- Direnç
- 52MOhm
- Turn On Delay Time
- 15 ns
- Case Connection
- DRAIN
- REACH Uyumluluk Kodu
- not_compliant
- Operating Mode
- ENHANCEMENT MODE
- Kurşunsuz Kodu
- yes
- Terminal Formu
- GULL WING
- Pin Sayısı
- 3
- Fall Time Typ
- 110 ns
- Jesd30 Code
- R-PSSO-G2
- Rds On Max Id Vgs
- 52m Ω @ 16.5A, 10V
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