FQB25N33TM-F085

Specifications

Terminal Formu

GULL WING

Fall Time Typ

70 ns

Pulsed Drain Currentmax Idm

100A

Pin Sayısı

3

Jesd30 Code

R-PSSO-G2

Gate To Source Voltage Vgs

30V

Turn Off Delay Time

90 ns

Tepe Reflow Sıcaklığı (°C)

245

Rds On Max Id Vgs

230m Ω @ 12.5A, 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

2

Number Of Elements

1

Terminal Kaplaması

Tin (Sn)

Transistor Application

SWITCHING

Case Connection

DRAIN

Input Capacitance Ciss Max Vds

2010pF @ 25V

Turn On Delay Time

20 ns

Current Continuous Drain Id25

25A Tc

Kurşunsuz Kodu

yes

Operating Mode

ENHANCEMENT MODE

REACH Uyumluluk Kodu

not_compliant

Ambalaj

Tape & Reel (TR)

Element Configuration

Single

Continuous Drain Current Id

25A

Gate Charge Qg Max Vgs

75nC @ 15V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

30

Nem Hassasiyeti (MSL)

1 (Unlimited)

Qualification Status

Not Qualified

Parça Durumu

Obsolete

Power Dissipation Max

3.1W Ta 250W Tc

Kurşunsuz

Lead Free

Vgsth Max Id

5V @ 250μA

Rise Time

100ns

Fet Type

N-Channel

Drain To Source Voltage Vdss

330V

Drive Voltage Max Rds On Min Rds On

10V

Vgs Max

±30V