Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal
- SMD/SMT
- RoHS Durumu
- ROHS3 Compliant
- Transistor Element Material
- SILICON
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Dual Supply Voltage
- 100V
- Ambalaj
- Tape & Reel (TR)
- Continuous Drain Current Id
- -22A
- Gate Charge Qg Max Vgs
- 50nC @ 10V
- JESD-609 Kodu
- e3
- Montaj Tipi
- Surface Mount
- Reach Svhc
- No SVHC
- Vgs Max
- ±30V
- Weight
- 1.31247g
- Akım Değeri
- -22A
- Seri
- QFET®
- Vgsth Max Id
- 4V @ 250μA
- Yayın Yılı
- 2002
- Drain To Source Breakdown Voltage
- -100V
- Power Dissipation
- 125W
- Turn Off Delay Time
- 60 ns
- Contact Plating
- Tin
- Gate To Source Voltage Vgs
- 30V
- Radyasyon Dayanımı
- No
- Current Continuous Drain Id25
- 22A Tc
- Input Capacitance Ciss Max Vds
- 1500pF @ 25V
- Number Of Elements
- 1
- Parça Durumu
- Active
- Fabrika Tedarik Süresi
- 4 Weeks
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- ECCN Kodu
- EAR99
- Element Configuration
- Single
- Genişlik
- 9.65mm
- Lifecycle Status
- ACTIVE (Last Updated: 18 hours ago)
- Montaj
- Surface Mount
- Drive Voltage Max Rds On Min Rds On
- 10V
- Fet Type
- P-Channel
- Rise Time
- 170ns
- Power Dissipation Max
- 3.75W Ta 125W Tc
- Uzunluk
- 10.67mm
- Yükseklik
- 4.83mm
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